Using temperature as observable of the frequency response of RF CMOS amplifiers

The power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of a RF LNA is observed by measuring spectral components of the sensed temperature. Results prove that temperature can be used to debug and observe figures of merit of analog blocks in a RFIC. Experimental measurements have been done in a 0.25 mum CMOS process. Laser probing techniques have been used as temperature sensors; specifically, a thermoreflectometer and a Michaelson interferometer.Peer ReviewedPostprint (author's final draft

Development of an original method of high resolution imagery in real time across an absorbent environment: application to microelectronic circuits

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Strain imaging in thermoelectric devices by laser probe shearography

We have developed an original optical set-up and method for the measurement of strain in electronic components. We have applied it for the study of thermoelectric devices. The method is based on speckle interferometry imaging called shearography. Two images of a same object lighted by coherent laser light are recorded upon a CCD camera through an appropriate optical system. The two images are slightly shifted one with respect to the other. This allows determining the gradient of normal surface displacement in the direction of the shift. Information taken in this manner in several directions allows to derive a map of a parameter related to the surface displacement gradients that we call "fragility factor"

Study of the thermal behaviour of PN thermoelectric couples by laser probe interferometric measurement

The purpose of the present paper is to provide experimental data related to the temperature distribution within thermoelectric devices (TE). Moreover our aim is to get this knowledge for a dynamic temperature response of the device. We propose a non-contact optical measuring method, based upon very high-resolution interferometry, to map temperature effects upon the surface of running thermoelectric devices. The Peltier sources within the device generate thermal waves associated to heat transport. These waves interfere when AC current is driven through the device. The interferences are clearly observed in our measurements, showing how heat flows from different sources and merge. The measuring method can be used to check material properties which in turns allows to optimize contact design

Study of the thermal behaviour of PN thermoelectric couples by laser probe interferometric measurement

The purpose of the present paper is to provide experimental data related to the temperature distribution within thermoelectric devices (TE). Moreover our aim is to get this knowledge for a dynamic temperature response of the device. We propose a non-contact optical measuring method, based upon very high-resolution interferometry, to map temperature effects upon the surface of running thermoelectric devices. The Peltier sources within the device generate thermal waves associated to heat transport. These waves interfere when AC current is driven through the device. The interferences are clearly observed in our measurements, showing how heat flows from different sources and merge. The measuring method can be used to check material properties which in turns allows to optimize contact design